Hybrid model of atmospheric pressure Ar/O2/TiCl4 radio-frequency capacitive discharge for TiO2 deposition

Articles you may be interested in OH radicals distribution in an Ar-H2O atmospheric plasma jet Influence of ambient air on the flowing afterglow of an atmospheric pressure Ar/O2 radiofrequency plasma Investigating the role of hydrogen in silicon deposition using an energy-resolved mass spectrometer and a Langmuir probe in an Ar/H2 radio frequency magnetron discharge Hydrogenated-amorphous carbon nitride films formed from the dissociative excitation reaction of CH 3 CN with the microwave-discharge flow of Ar: Correlation of the [N]/([N]+[C]) ratio with the relative number densities of the CH (A 2) and CN (B 2 +) states A hybrid global-analytical model of an atmospheric pressure radio-frequency driven capacitive discharge is applied to determine the plasma conditions for TiO 2 film deposition. The feed gas is mainly argon with a small fraction of O 2 and a smaller fraction of TiCl 4. Variations of the discharge parameters and species densities with O 2 concentration, discharge power, and flow rate are determined. A simplified chemistry model is developed and compared with the simulation results, showing good agreement. For a base case with Ar/O 2 /TiCl 4 flow rates of 203/30/0.17 sccm, the results indicate that a minimum O 2 fraction of 7.3 Â 10 À4 is required for pure (un-chlorinated) TiO 2 film deposition that the active precursor species is TiO 2 Cl 3 , with subsequent abstraction of Cl atoms by dissociative electron attachment and that the deposition rates are around 1 nm/s.